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Katarzyna Stokeley

affiliation not provided to SSRN

  • affiliation not provided to SSRN

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Scholarly Papers (1)

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Growth of 3C−SiC on Patterned 4H−SiC Substrates by Control of Mesa Direction

Number of pages: 30 Posted: 23 Apr 2026
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, S. Hindmarsh, Geoff West, Arne Benjamin Renz, Peter Michael Gammon, Marina Antoniou, Philip Andrew Mawby and Vishal Ajit Shah
University of Warwick, University of Warwick, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Warwick, University of Warwick, University of Warwick, University of Warwick, University of Warwick, University of Warwick and University of Warwick
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Abstract:

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Silicon Carbide, Chemical Vapour Deposition, Heteroepitaxy, Patterned substrate, power electronics