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Long Wang

affiliation not provided to SSRN

SCHOLARLY PAPERS

1

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9

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0

Scholarly Papers (1)

1.

Specific methods and underlying mechanisms for improving the quality of ε-Ga2O3 epitaxial films by two-step growth in MOCVD

Number of pages: 18 Posted: 25 Jun 2026
affiliation not provided to SSRN, Taiyuan University of Technology - College of Materials Science and Engineering, affiliation not provided to SSRN, affiliation not provided to SSRN, Xidian University, Xidian University, Xidian University - State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene and Xidian University
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Abstract:

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MOCVD, ε-Ga2O3, two-step growth, Heteroepitaxy