China
Xidian University - State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene
(110) diamond, single crystal growth, expansion, MPCVD
perovskite solar cells, grain boundary engineering, chemical polishing, post-treatment, wide-bandgap perovskites
RRAM, Ti3C2 MXene, Biological synapse
Ga2O3 films MOCVD sapphire
gallium oxide, Graphene, polycrystalline diamond, heat dissipation
gallium oxide, Graphene, Polycrystalline diamond, heat dissipation
β-Ga2O3 (100) film, orientation growth, AlN buffer layer, Solar-blind photodetector, DFT calculation
different orientations, single crystal, diamond, growth mechanism, layered growth
MOCVDDUV-LEDGraphenevan der Waals epitaxial nitrides
β-Ga2O3, Thermal boundary conductance, Diamond, Thermal conductivity, Anisotropy
organic cation doping, crystallization dynamic, strain, Perovskite solar cell
Microsupercapacitors, Ti3C2Tx MXene, Fractal microelectrodes, Photolithography, Alternating current line-filtering, Energy storage
MOCVD, GaN, RF Loss
GaN on Diamond, Nano-patterned Buffer, High-quality GaN
CsPbIBr2, halide phase segregation, charge transporting layer, interface property, Perovskite solar cells
Junctionless GAA, CFET, CMOS inverter
GaN, SBDs, γ irradiation, breakdown voltage, radiation-resistance
Perovskite solar cells, Defect passivation, Non-2D perovskite, Ammonium halides, Surface modification
β-Ga₂O₃, kinetic Monte Carlo, metalorganic chemical vapor deposition (MOCVD), Homoepitaxy
Geaphene-like structures, non-metal doping, bandgap engineering, carrier mobility, 2D semiconductor
perovskite thick-films, CsPbBr3, screen-printing, X-ray detection, imaging application
MOCVD, ε-Ga2O3, two-step growth, Heteroepitaxy
GaN, Epitaxial growth, Conductivity
Perovskite solar cell, Film homogeneity, Defect Passivation, Scalable manufacturing, Under ambient conditions
