Xiangdong Li

Xidian University

Xi'an Chang'an two hundred ten National Road

Xian

China

SCHOLARLY PAPERS

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Scholarly Papers (1)

1.

A Γ-Irradiated Algan/Gan Schottky Barrier Diode with Barrier-Decreased Schottky Junction and High Breakdown Voltage

Number of pages: 21 Posted: 16 Apr 2025
Xidian University, Xidian University, Xidian University, Xidian University, Xidian University, Xidian University, Xidian University, Xidian University, Xidian University and Xidian University - State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene
Downloads 13 (1,258,727)

Abstract:

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GaN, SBDs, γ irradiation, breakdown voltage, radiation-resistance