Yunxing Zhao

Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering

Ningbo, 315201

China

SCHOLARLY PAPERS

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Scholarly Papers (1)

1.

Charge Carrier Dynamics for Silicon Oxide Tunneling Junctions Mediated by Local Pinholes

Number of pages: 28 Posted: 24 Aug 2021
Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, University of Nottingham, Ningbo - Department of Electrical and Electronic Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering and Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering
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Citation 2

Abstract:

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pinhole; carrier transport mechanism; TOPCon; thermal expansion; passivation properties