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J.C. Greer

University of Nottingham, Ningbo - Department of Electrical and Electronic Engineering

China

  • University of Nottingham, Ningbo - Department of Electrical and Electronic Engineering

SCHOLARLY PAPERS

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Charge Carrier Dynamics for Silicon Oxide Tunneling Junctions Mediated by Local Pinholes

Number of pages: 28 Posted: 24 Aug 2021
Zhenhai Yang, Zunke Liu, Mei Cui, Jiang Sheng, Li Chen, Linna Lu, Wei Guo, Xi Yang, Yunxing Zhao, Weichuang Yang, J.C. Greer, Yuheng Zeng, Baojie Yan and Jichun Ye
Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, University of Nottingham, Ningbo - Department of Electrical and Electronic Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering and Chinese Academy of Sciences (CAS) - Ningbo Institute of Materials Technology and Engineering
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Abstract:

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pinhole; carrier transport mechanism; TOPCon; thermal expansion; passivation properties