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Hiroshi Kawarada

Waseda University

SCHOLARLY PAPERS

4

DOWNLOADS

303

TOTAL CITATIONS

0

Scholarly Papers (4)

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1.

C-Si Interface on Sio2/(111) Diamond P-Mosfets with High Mobility and Excellent Normally-Off Operation

Number of pages: 17 Posted: 16 Feb 2022
Xiaohua Zhu, Te Bi, Xiaolu Yuan, Yuhao Chang, Runming Zhang, Yu Fu, Juping Tu, Yabo Huang, Jinlong Liu, Chengming Li and Hiroshi Kawarada
University of Science and Technology Beijing, affiliation not provided to SSRN, University of Science and Technology Beijing, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Science and Technology Beijing, University of Science and Technology Beijing, University of Science and Technology Beijing - Institute for Advanced Materials and Technology, University of Science and Technology Beijing and Waseda University
Downloads 126 (584,619)

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Diamond, C-Si interface, EELS, MOSFETs, Electrical characteristic

2.

Band Alignment and Quality of Al0.6ga0.4n/Aln Films Grown on Diamond (111) Substrate by Remote N-Plasma Assisted Mbe

Number of pages: 41 Posted: 24 Mar 2023
shozo kono, Kohei Shima, Shigefusa Chichibu, Masaru Shimomura, Taisuke Kageura and Hiroshi Kawarada
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Shizuoka University, affiliation not provided to SSRN and Waseda University
Downloads 69 (883,195)

Abstract:

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DiamondAluminum nitrideAluminum gallium nitrideBband alignmentRemote plasma MBEX-ray photoelectron spectroscopy

3.

C-Si Bonds 2dhg Diamond Mosfet; Normally-Off Characteristics at Low Temperatures (10 K) and Wide Temperature Stability (10-573 K)

Number of pages: 25 Posted: 15 Feb 2022
Yuta Nameki, Te Bi, Jun Tsunoda, Naoya Niikura, Masakazu Arai, Yasuhiro Takahashi, Kousuke Ota, Atsushi Hiraiwa and Hiroshi Kawarada
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Waseda University
Downloads 68 (891,180)

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Diamond, Carbon electronics, C-Si Diamond surface Metal-oxide-semiconductor field-effect transistor (MOSFET), Two-dimensional hole gas (2DHG), Low Temperatures Characteristics, Wide Temperature Stability

4.

Enhanced Breakdown Voltage for P-Gan Gate Algan/Gan Hemt on Aln/Si with Triple Trenches: A Simulation Study

Number of pages: 21 Posted: 10 Jun 2024
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina and M.S.N. Samsol Baharin
affiliation not provided to SSRN, Waseda University, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 40 (1,183,237)

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GaN, high-electron-mobility transistor, COMSOL, breakdown voltage, simulation