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M.S.N. Samsol Baharin

affiliation not provided to SSRN

SCHOLARLY PAPERS

1

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40

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0

Scholarly Papers (1)

1.

Enhanced Breakdown Voltage for P-Gan Gate Algan/Gan Hemt on Aln/Si with Triple Trenches: A Simulation Study

Number of pages: 21 Posted: 10 Jun 2024
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina and M.S.N. Samsol Baharin
affiliation not provided to SSRN, Waseda University, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 40 (1,183,237)

Abstract:

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GaN, high-electron-mobility transistor, COMSOL, breakdown voltage, simulation