affiliation not provided to SSRN
Atomic layer deposition (ALD), Ferroelectric HfxZr1−xO2 thin film, Ferroelectricity, Metal-ferroelectric-metal (MFM) capacitor, Memory device, Interface reaction layer, Endurance property, Hard X-ray photoelectron spectroscopy (HAXPES)
single-crystal-like GaAs, flexible SC, low-angle grain boundaries, passivation, TOP:S treatment