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Jiyoung Kim

affiliation not provided to SSRN

SCHOLARLY PAPERS

2

DOWNLOADS

128

TOTAL CITATIONS

0

Scholarly Papers (2)

1.

Role of Interface Reaction Layer between Ferroelectric Hfxzr1−Xo2 Thin Film and Tin Electrode on Endurance Properties

Number of pages: 7 Posted: 04 May 2023
affiliation not provided to SSRN, National Institute for Materials Science, National Institute for Materials Science - International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, affiliation not provided to SSRN, Brookhaven National Laboratory, Brookhaven National Laboratory and affiliation not provided to SSRN
Downloads 93 (725,554)

Abstract:

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Atomic layer deposition (ALD), Ferroelectric HfxZr1−xO2 thin film, Ferroelectricity, Metal-ferroelectric-metal (MFM) capacitor, Memory device, Interface reaction layer, Endurance property, Hard X-ray photoelectron spectroscopy (HAXPES)

2.

Significant Improvement of Conversion Efficiency by Passivation of Low-Angle Grain Boundaries in Flexible Low-Cost Single-Crystal-Like Gaas Thin-Film Solar Cells Directly Deposited on Metal Tape

Number of pages: 34 Posted: 16 Feb 2022
University of Houston, University of Houston, University of Houston, University of Houston, University of Houston, University of Houston, University of Houston, University of Houston, University of Houston, Inha University, Inha University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Houston, Rochester Institute of Technology (RIT), University of Houston and University of Houston
Downloads 35 (1,249,711)

Abstract:

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single-crystal-like GaAs, flexible SC, low-angle grain boundaries, passivation, TOP:S treatment