default author photo

Kazuhito Tsukagoshi

National Institute for Materials Science

Tsukuba, 305-0047

Japan

  • National Institute for Materials Science

SCHOLARLY PAPERS

3

DOWNLOADS

208

TOTAL CITATIONS

0

Scholarly Papers (3)

Actions:
Email selected abstracts
1.

Role of Interface Reaction Layer between Ferroelectric Hfxzr1−Xo2 Thin Film and Tin Electrode on Endurance Properties

Number of pages: 7 Posted: 04 May 2023
Takashi Onaya, Toshihide Nabatame, Takahiro Nagata, Kazuhito Tsukagoshi, Jiyoung Kim, Chang-Yong Nam, Esther H. R. Tsai and Koji Kita
affiliation not provided to SSRN, National Institute for Materials Science, National Institute for Materials Science - International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, affiliation not provided to SSRN, Brookhaven National Laboratory, Brookhaven National Laboratory and affiliation not provided to SSRN
Downloads 95 (725,554)

Abstract:

Loading...

Atomic layer deposition (ALD), Ferroelectric HfxZr1−xO2 thin film, Ferroelectricity, Metal-ferroelectric-metal (MFM) capacitor, Memory device, Interface reaction layer, Endurance property, Hard X-ray photoelectron spectroscopy (HAXPES)

2.

Nanoparticulate Films of Wo3 and Moo3 Composites for Enhancing Uv Light Electrochromic Absorption and Energy Storage Applications

Number of pages: 31 Posted: 01 Nov 2022
Wen-Bin Jian, Chia-Chun Wei, Tung-Han Wu, Jun-Wei Huang, Ben-Li Young, Yu-Liang Lin, Jiun-Tai Chen, Chain-Shu Hsu, Yuan-Ron Ma and Kazuhito Tsukagoshi
National Chiao Tung University, National Chiao Tung University, National Chiao Tung University, National Chiao Tung University, National Chiao Tung University, National Chiao Tung University, National Chiao Tung University, National Chiao Tung University, National Dong Hwa University and National Institute for Materials Science
Downloads 79 (809,932)

Abstract:

Loading...

electrochromic devices, Tungsten trioxides, Molybdenum trioxides, Nanoparticle composites, Violet light shutter

3.

Oxygen-Pressure Driven Balancing of Interface and Bulk Scattering in Amorphous Oxide Semiconductor Thin-Film Transistors

Number of pages: 31 Posted: 28 May 2025
Yen-Fu Lin, Che-Yi Lin, Yu-Ching Kuo, Yi-Chen Liu, Feng-Shou Yang, Yuan-Ming Chang, Po-Wen Chiu, Toshihide Nabatame, Mengjiao Li and Kazuhito Tsukagoshi
National Chung Hsing University, National Chung Hsing University, National Chung Hsing University, National Chung Hsing University, affiliation not provided to SSRN, National Chung Hsing University, affiliation not provided to SSRN, National Institute for Materials Science, Shanghai University and National Institute for Materials Science
Downloads 34 (1,263,436)

Abstract:

Loading...

metal oxide semiconductor, thin-film transistors, Low-frequency noise, oxygen pressure, charge transport mechanism