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Dengkui Wang

Changchun University of Science and Technology

China

SCHOLARLY PAPERS

5

DOWNLOADS

237

TOTAL CITATIONS

0

Scholarly Papers (5)

Tailoring the Optical Properties of Mocvd Grown Ingaas/Inalgaas Mqws with Gaas Isl

Number of pages: 18 Posted: 22 May 2024
Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology and Changchun University of Science and Technology
Downloads 43 (1,170,161)

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InGaAs/InAlGaAs MQWs, GaAs ISL, localized states defects, MOCVD

Tailoring the Optical Properties of Mocvd Grown Ingaas/Inalgaas Mqws with Gaas Isl

Number of pages: 18 Posted: 08 Jun 2024
Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology and Changchun University of Science and Technology
Downloads 20 (1,500,232)

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InGaAs/InAlGaAs MQWs, GaAs ISL, localized states defects, mocvd

2.

Adjustment in Phonon Scatting Through Doping to Boosting the Near-IR Photoresponse Performance of P-Type Snse Nanosheets

Number of pages: 25 Posted: 04 Apr 2024
Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Jilin Normal University, Chongqing University - Analytical and Testing Center, Changchun University of Science and Technology, General Research Institute for Nonferrous Metals, Changchun University of Science and Technology, Changchun University of Science and Technology, Harbin Institute of Technology and Harbin Institute of Technology
Downloads 52 (1,041,696)

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phonon scattering, Near-IR, SnSe, wide spectrum photodetector, Bi-doping

Effect of Localized States on the Optical Properties in Ingaas/Gaas Multiple Quantum Wells Grown by Mocvd

Number of pages: 21 Posted: 15 Feb 2022
Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology and Changchun University of Science and Technology
Downloads 49 (1,119,531)

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MOCVD, multiple quantum wells, photoluminescence, localized states

Effect of Localized States on the Optical Properties in Ingaas/Gaas Multiple Quantum Wells Grown by Mocvd

Posted: 15 Mar 2022
Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology and Changchun University of Science and Technology

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Keywords: MOCVD, Multiple Quantum Wells, Photoluminescence, Localized states

4.

Effects of Growth Temperature and Rapid Thermal Annealing on Luminescence Properties of Ingaas/Gaas Multiple Quantum Wells

Number of pages: 24 Posted: 07 Jun 2022
Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, affiliation not provided to SSRN, affiliation not provided to SSRN, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology and Changchun University of Science and Technology
Downloads 46 (1,121,190)

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MOCVD, multi-quantum well, Photoluminescence, localized states, fast thermal annealing

5.

High-Energy Electron Irradiation-Induced Changes in Interfacial Atomic Diffusion and Luminescent Behavior of Inas/Inassb Type Ii Superlattices

Number of pages: 21 Posted: 26 Sep 2024
Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, Changchun University of Science and Technology, University of Electronic Science and Technology of China (UESTC) and affiliation not provided to SSRN
Downloads 27 (1,359,097)

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InAs/InAsSb superlittice, High-energy electron irradiation, Interfacial atomic diffusion, Geometric phase analysis, Luminescent behavior