China
Changchun University of Science and Technology
InGaAs/InAlGaAs MQWs, GaAs ISL, localized states defects, MOCVD
InGaAs/InAlGaAs MQWs, GaAs ISL, localized states defects, mocvd
phonon scattering, Near-IR, SnSe, wide spectrum photodetector, Bi-doping
MOCVD, multiple quantum wells, photoluminescence, localized states
Keywords: MOCVD, Multiple Quantum Wells, Photoluminescence, Localized states
MOCVD, multi-quantum well, Photoluminescence, localized states, fast thermal annealing
InAs/InAsSb superlittice, High-energy electron irradiation, Interfacial atomic diffusion, Geometric phase analysis, Luminescent behavior