China
Changchun University of Science and Technology
first principle, monolayer and bilayer MoS2, Optical Properties
InGaAs/InAlGaAs MQWs, GaAs ISL, localized states defects, MOCVD
InGaAs/InAlGaAs MQWs, GaAs ISL, localized states defects, mocvd
photocatalytic hydrogen evolution, Topological insulator, Photothermal co-catalysis Bi2Te3@Zn0.67Cd0.33S@GO, Built-in electric field
phonon scattering, Near-IR, SnSe, wide spectrum photodetector, Bi-doping
Chemical vapor deposition, localized surface plasma field, Er:Yb rare-earth doping, WS2 thin films
2D Bi2Te3, p-type doping, p-n homojunction, self-powered photodetector, broadband photodetection
infrared detection, photothermal effect, photothermal assistant, p-n heterojunction, detectivity, Te/Bi2Te3/In2O3 film
Atom doping, Surface Ni ion grafting, Atomic-level engineering, Photocatalytic
2D Bi2Te3, p-type doping, Band alignment, broadband photodetection, multispectral imaging
InAs/InAsSb superlittice, High-energy electron irradiation, Interfacial atomic diffusion, Geometric phase analysis, Luminescent behavior
bimetallic perovskite, NIR photodetector, polarization, imaging application
BiVO4, Hydrothermal method, Self-powered PEC detector
Bi2O2Te, broadband imaging, p-n heterojunction, responsivity
Room-temperature infrared photon detectors, long-wavelength infrared photodetection, Bismuth telluride, Spectrally Tunable, Imaging detection
WS2(Erx-Yby), chemical vapor deposition, Er3+/Yb3+ co-doping, ratio optimization