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Charles Leroux

affiliation not provided to SSRN

SCHOLARLY PAPERS

2

DOWNLOADS

187

TOTAL CITATIONS

0

Scholarly Papers (2)

1.

In Depth Parasitic Capacitance Analysis on Gan-Hemts with Recessed Mis Gate

Number of pages: 23 Posted: 17 Feb 2022
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 125 (576,708)

Abstract:

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Electrical characterization, Modelling, Power semiconductor devices, Gate edge, Recess depth, Normally-off, HEMT, GaN, Device, 2DEG, Parasitic capacitance.

2.

P-Type Niox Ultra-Thin Film as Highly Efficient Holes Extraction Layer in N-Type Pbs Quantum Dots Based Nir Photodiode

Number of pages: 4 Posted: 25 Apr 2023
STMicroelectronics, STMicroelectronics, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 62 (942,565)

Abstract:

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Nickel oxide (NiOx), holes extraction layer, Colloidal quantum dots, infrared photodetector