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Romain Gwoziecki

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In Depth Parasitic Capacitance Analysis on Gan-Hemts with Recessed Mis Gate

Number of pages: 23 Posted: 17 Feb 2022
Roméo KOM KAMMEUGNE, Charles Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, Laura Vauche, Romain Gwoziecki, Xavier Garros, Matthew Charles, Edwige Bano and Gérard Ghibaudo
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Abstract:

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Electrical characterization, Modelling, Power semiconductor devices, Gate edge, Recess depth, Normally-off, HEMT, GaN, Device, 2DEG, Parasitic capacitance.