N-polar AlGaN, vicinal sapphire substrate, crystalline quality, surface morphology, electron concentration, and electron mobility
Quasi-Two-Dimensional Perovskites, PEABr, Interface Modification Layer, Cs0.9Rb0.1PbBr2.1Cl0.9 Sky-Blue LED
Semiconductors, Epitaxial growth, (11-22) p-AlGaN, Cp2Mg molar flow rate, hole concentration
semipolar AlInGaN epilayer, indium incorporation, growth rate, surface morphology, proportion of hydrogen, growth pressure.