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Byeongwan Kim

Pusan National University

mulgeumup beomyeli

Pusan 609-735, 50612

Korea, Republic of (South Korea)

  • Pusan National University

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Hysteresis in All Cvd H-Bn/Graphene/H-Bn Field-Effect Transistors

Number of pages: 22 Posted: 28 May 2022
Seokjun Kim, Byeongwan Kim, Seonha Park, Wonseok Chang, Haeyong Kang, Seokho Kim, Habeom Lee and Songkil Kim
Pusan National University, Pusan National University, Pusan National University, affiliation not provided to SSRN, Pusan National University, Changwon National University, Pusan National University and Pusan National University
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h-BN/graphene/h-BN heterostructure, field-effect transistor, hysteresis, charge trapping, memristive device