mulgeumup beomyeli
Pusan 609-735, 50612
Korea, Republic of (South Korea)
Pusan National University
h-BN/graphene/h-BN heterostructure, field-effect transistor, hysteresis, charge trapping, memristive device
β-Ga2O3 single crystal, Schottky diode, Efros-Shklovskii variable-range hopping