Korea, Republic of (South Korea)
Korea Institute of Materials Science
molybdenum disulfide, wet transfer, wrinkle-free, Wettability, intrinsic mobility
Tellurium (Te) thin film, p-n heterojunction, Near-infrared photodetectors, CMOS-compatibility
IGZO field effect transistor, buried type gate structure, enhanced electrical parameters, high yield, high bias-stress stability
CuBr film, gas sensors, low-temperature solution process, flexible electronics, ammonia sensors
aluminum-doped zinc oxide (AZO), Color implementation, distributed Bragg reflector (DBR), flexible and transparent solar cells, VIPVs