Eva Zarkadoula

Government of the United States of America - Oak Ridge National Laboratory

1 Bethel Valley Road, P.O. Box 2008, Mail Stop 608

Room B-106, Building 5700

Oak Ridge, TN 37831

United States

SCHOLARLY PAPERS

4

DOWNLOADS

75

TOTAL CITATIONS

1

Scholarly Papers (4)

1.

Concentric Core-Shell Tracks and Spectroscopic Properties of Srtio3 Under Intense Electronic Excitation

NANOTODAY-D-22-00697
Number of pages: 26 Posted: 08 Jul 2022
Shandong University, Government of the United States of America - Oak Ridge National Laboratory, affiliation not provided to SSRN, Universidad Autónoma de Madrid - Center for Micro Analysis of Materials (CMAM), Shandong University and Shandong University
Downloads 34 (998,694)

Abstract:

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electronic energy loss, track fine structure, molecular dynamics simulation, hillock nanostructure, spectroscopic properties

2.

Multi-Energy Ion Irradiation Effects and Distinctive Features of Colour Centre Generation in Yttria-Stabilized Zirconia Driven by Structural Discrepancy

Number of pages: 38 Posted: 25 Dec 2024
Shandong University, Shandong University, Shandong University, Government of the United States of America - Oak Ridge National Laboratory, University of Tennessee and Shandong University
Downloads 26 (1,088,673)

Abstract:

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Yttria-stabilized zirconia, Irradiation effect, Structural transformation, Energy loss mechanism, Colour centre

3.

Underlying Mechanism of Structural Transformation between GASB and Gaas Response to Intense Electronic Excitation

Number of pages: 29 Posted: 10 Sep 2024
Shandong University, Shandong University, Shandong University, University of Tennessee, Government of the United States of America - Oak Ridge National Laboratory, Shandong University and Shandong University
Downloads 14 (1,235,148)
Citation 1

Abstract:

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Intense electronic excitation, Thermal spike response, Structural transformation, Physical mechanism, Optical/optoelectronic performance

4.

Distinctive Features of Structural Evolution and Thermodynamic Response in Wide-Bandgap Semiconductors Driven by Intense Electronic Excitation

Number of pages: 39 Posted: 22 May 2025
Shandong University, Shandong University, Government of the United States of America - Oak Ridge National Laboratory, University of Tennessee, Shandong University and Shandong University
Downloads 1 (1,338,554)

Abstract:

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Wide bandgap semiconductor, Intense electronic excitation, Irradiation damage behavior, Thermodynamic response mechanism, Optical/optoelectronic performance