Huiying Rd
DaLian, LiaoNing, 116024
China
Dalian University of Technology
Initial oxidation, 4H-SiC surface, First-principles, Thermodynamics, Defects evolution
HfO2 RRAM, Grain boundaries, oxygen vacancies, conductive filaments, First principles calculations
Janus group-III monochalcogenides, multilayers, vdW heterostructures, first-principles calculations, piezoelectric materials.
Solvent Effect, self-trapped excitons, photoluminescence, Ultrafast Dynamics, Optical Anti-Counterfeiting