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Dejun WANG

Dalian University of Technology

Huiying Rd

DaLian, LiaoNing, 116024

China

  • Dalian University of Technology

SCHOLARLY PAPERS

3

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117

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0

Scholarly Papers (3)

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1.

Carriers Transport Behavior and Path for Hfox -Based Rram Devices With Improved Performance Bynitrogen Annealing

Number of pages: 27 Posted: 20 Jun 2023
Jiao Bai, Weiwei Xie, Dehao Qu, Shengsheng Wei, Yue Li, Fuwen Qin and Dejun WANG
Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology and Dalian University of Technology
Downloads 43 (1,157,785)

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HfOx-based RRAM, Nitrogen annealing, Switching mechanism, Grain boundary effect, Relaxation time

2.

The Initial Oxidation of the 4h-Sic (0001) Surface with C-Related Point Defects：Insight by First-Principles Calculations

Number of pages: 28 Posted: 07 Nov 2022
Shengsheng Wei, Zhipeng Yin, Jiao Bai, Weiwei Xie, Fuwen Qin, Yan Su and Dejun WANG
Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology and Dalian University of Technology
Downloads 42 (1,170,409)

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Initial oxidation, 4H-SiC surface, First-principles, Thermodynamics, Defects evolution

3.

Oxygen Vacancy Conductive Behavior on the Grain Boundaries of the Functional Layer of Hfo2-Based Rram

Number of pages: 27 Posted: 07 May 2024
Dehao Qu, Junzhe Liu, Peng-Fei Cui, Fuwen Qin, Yan Su and Dejun WANG
Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology and Dalian University of Technology
Downloads 32 (1,290,922)

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HfO2 RRAM, Grain boundaries, oxygen vacancies, conductive filaments, First principles calculations