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Yue Li

Dalian University of Technology

Huiying Rd

DaLian, LiaoNing, 116024

China

  • Dalian University of Technology

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Scholarly Papers (1)

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Carriers Transport Behavior and Path for Hfox -Based Rram Devices With Improved Performance Bynitrogen Annealing

Number of pages: 27 Posted: 20 Jun 2023
Jiao Bai, Weiwei Xie, Dehao Qu, Shengsheng Wei, Yue Li, Fuwen Qin and Dejun WANG
Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology, Dalian University of Technology and Dalian University of Technology
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HfOx-based RRAM, Nitrogen annealing, Switching mechanism, Grain boundary effect, Relaxation time