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Seung Heon Shin

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

4

DOWNLOADS

180

TOTAL CITATIONS

0

Scholarly Papers (4)

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1.

Investigation of Low to High-Dose Gamma-Ray (Γ-Ray) Radiation Effects on Indium-Zinc-Oxide (Izo) Thin Film Transistor (Tft)

Number of pages: 18 Posted: 22 Sep 2023
Do-Kywn Kim, Dong-Seok Kim, Tae-Eon Kim, Min-Ju Kim and Seung Heon Shin
affiliation not provided to SSRN, Korea Atomic Energy Research Institute, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 68 (891,180)

Abstract:

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Gamma-Ray (γ-ray), Indium-Zinc-Oxide (IZO), Thin Film Transistor (TFT), radiation

2.

Effect of In-Situ Zn Doping on Suppression of Phase Separation in in X Al1− X as Epitaxial Layer on Inp(001) Grown by Mocvd

Number of pages: 24 Posted: 31 Jan 2023
Hyunchul Jang, Sang Tae Lee, Chang-Hun Song, Minwoo Kong, Jae-Phil Shim, Seung Heon Shin, Keun Man Song, Yong-Su Choi, Donghyun Kim, Kyong-Ho Park and Chan-Soo Shin
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Seoul National University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 48 (1,086,013)

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Keyworld: MOCVD, InAlAs, Zn doping, Phase separation, surface morphology

3.

Improvement of Electrical Performance in Normally-Off Gan Mosfet with Regrown Algan Layer on the Source/Drain Region

Number of pages: 16 Posted: 08 May 2024
Seung Heon Shin, Do-Kywn Kim, Sung-bum Bae, Hyung-Seok Lee, Jung-Hee Lee and Dong-Seok Kim
affiliation not provided to SSRN, affiliation not provided to SSRN, Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, affiliation not provided to SSRN and Korea Atomic Energy Research Institute
Downloads 33 (1,277,121)

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Normally-off, GaN MOSFET, Enhancement-mode (E-mode), Selective regrowth technique (SRT), Selective area regrowth (SAG), and AlGaN

4.

Performance of Flexible In0.7ga0.3as Mosfets by Utilizing Liquid Polyimide (Lpi) Transfer with Effective Mobility of 3,667 Cm2/V-S

Number of pages: 18 Posted: 26 Oct 2022
Do-Kywn Kim, Saungeun Park, Jae-Phil Shim and Seung Heon Shin
affiliation not provided to SSRN, University of Texas at Austin, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 31 (1,304,549)

Abstract:

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Indium Gallium Arsenide (InGaAs), InGaAs MOSFETs, III-V MOSFETs, Flexible III-V, Flexible InGaAs MOSFETs, Flexible MOSFETs, Flexible III-V MOSFETs, Liquid Polyimide (LPI), and Flexible electronics.