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Jung-Hee Lee

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

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Scholarly Papers (1)

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Improvement of Electrical Performance in Normally-Off Gan Mosfet with Regrown Algan Layer on the Source/Drain Region

Number of pages: 16 Posted: 08 May 2024
Seung Heon Shin, Do-Kywn Kim, Sung-bum Bae, Hyung-Seok Lee, Jung-Hee Lee and Dong-Seok Kim
affiliation not provided to SSRN, affiliation not provided to SSRN, Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, affiliation not provided to SSRN and Korea Atomic Energy Research Institute
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Abstract:

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Normally-off, GaN MOSFET, Enhancement-mode (E-mode), Selective regrowth technique (SRT), Selective area regrowth (SAG), and AlGaN