14 gil 5 Hwarangno, Seongbuk-gu
Seoul, 02792
Korea, Republic of (South Korea)
Korea Institute of Science and Technology (KIST)
HfZrO2 thin films, crystal structure modulation, anti-ferroelectricity, DRAM capacitor, Energy storage device
HfZrO2 thin films, crystal structure modulation, atomic layer deposition, anti-ferroelectricity, DRAM capacitor, energy storage device