Seoul
Korea, Republic of (South Korea)
Hanyang University
Atomic layer deposition, MoO2, Template effect, Rutile TiO2, Equivalent oxide thickness, DRAM capacitor
HfZrO2 thin films, crystal structure modulation, anti-ferroelectricity, DRAM capacitor, Energy storage device
HfZrO2 thin films, crystal structure modulation, atomic layer deposition, anti-ferroelectricity, DRAM capacitor, energy storage device
Capacitors, Dielectric properties, Atomic Layer Deposition, TiO2
Two-dimensional material, Tin sulfide compounds, atomic layer deposition, Annealing conditions, Crystallinity, Phase transition
low-temperature, lithicone, protective layers, molecular layer deposition, plasma treatment, ultrathin li metal anodes
Low-temperature chemical vapor deposition, Sn-based metal-organic films, Photochemical transformation, Deep ultraviolet lithography, Dry resist
