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Ville Vahanissi

Aalto University

P.O. Box 21210

Helsinki, 00101

Finland

SCHOLARLY PAPERS

4

DOWNLOADS

99

TOTAL CITATIONS

0

Scholarly Papers (4)

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1.

Atomic-Layer-Deposited Cuxcryoz Thin Films: Optoelectronic Properties and Potential Application as Hole-Selective Contacts for C-Si Solar Cells

Number of pages: 25 Posted: 14 Oct 2024
Gabriel Bartholazzi, Topias Jussila, Jorit Obenlüneschloß, Ville Vahanissi, Anjana Devi, Hele Savin, Maarit Karppinen, Daniel Macdonald and Lachlan E. Black
affiliation not provided to SSRN, Aalto University, Ruhr University of Bochum, Aalto University, Ruhr University of Bochum, Aalto University, Aalto University, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 34 (1,263,436)

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copper chromium oxide, atomic layer deposition, hole-selective materials, optoelectronic properties, band diagram

2.

Charged Thin Film Enables Dopant Free Ohmic Metal-Semiconductor Contact Formation

Number of pages: 11 Posted: 18 Jan 2025
Lassi Lahtiluoma, Olli Eemeli Setälä, Ville Vahanissi and Hele Savin
Aalto University, Aalto University, Aalto University and Aalto University
Downloads 33 (1,290,922)

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Ohmic contact, ALD, contact resistivity, accumulation, inversion

3.

Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopy

Number of pages: 12 Posted: 24 Nov 2022
Ramsha Khan, Hannu Pekka Pasanen, Harri Ali-Löytty, Hussein .M Ayedh, Jesse Saari, Ville Vahanissi, Mika Valden, Hele Savin and Nikolai Tkachenko
Tampere University, Tampere University, Tampere University - Faculty of Engineering and Natural Sciences, Aalto University, Tampere University, Aalto University, Tampere University - Faculty of Engineering and Natural Sciences, Aalto University and Tampere University
Downloads 24 (1,399,036)

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Transient reflectance spectroscopyCharge transferTitanium dioxidePhotoelectrochemistryAtomic layer deposition

4.

Reducing Al/p-Si contact resistivity by utilizing Al2O3 induced surface accumulation

Number of pages: 11 Posted: 08 May 2026
Lassi Lahtiluoma, Olli Eemeli Setälä, Ville Vahanissi and Hele Savin
Aalto University, Aalto University, Aalto University and Aalto University
Downloads 8 (1,584,314)

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Ohmic contact, Surface accumulation, Dopant free, Al2O3, Charged thin film