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Lassi Lahtiluoma

Aalto University

P.O. Box 21210

Helsinki, 00101

Finland

SCHOLARLY PAPERS

2

DOWNLOADS

42

TOTAL CITATIONS

0

Scholarly Papers (2)

1.

Charged Thin Film Enables Dopant Free Ohmic Metal-Semiconductor Contact Formation

Number of pages: 11 Posted: 18 Jan 2025
Aalto University, Aalto University, Aalto University and Aalto University
Downloads 34 (1,290,922)

Abstract:

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Ohmic contact, ALD, contact resistivity, accumulation, inversion

2.

Reducing Al/p-Si contact resistivity by utilizing Al2O3 induced surface accumulation

Number of pages: 11 Posted: 08 May 2026
Aalto University, Aalto University, Aalto University and Aalto University
Downloads 8 (1,584,314)

Abstract:

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Ohmic contact, Surface accumulation, Dopant free, Al2O3, Charged thin film