218 Gajeong-ro, Yuseong-gu
Daejeon, 305-700
Korea, Republic of (South Korea)
Electronics and Telecommunications Research Institute
α-Ga2O3, Schottky, Breakdown Voltage, Gaussian barrier height distribution, barrier inhomogeneity
α-Ga2O3, Schottky, barrier inhomogeneity, I-V-T characteristics, double Gaussian distribution of barrier heights
oxide materials, thin films, semiconductors, electrical transport, electronic properties, computer simulations