default author photo

Jonghan Won

Korea Basic Science Institute (KBSI)

169-148, Gwahak-ro

Yuseong-gu

Daejeon

Korea, Republic of (South Korea)

  • Korea Basic Science Institute (KBSI)

SCHOLARLY PAPERS

3

DOWNLOADS

136

TOTAL CITATIONS

0

Scholarly Papers (3)

Actions:
Email selected abstracts
1.

Residual Hydrogen-Induced Irreversibility in Insulator-Metal Transition of VO2 film

Number of pages: 16 Posted: 23 Sep 2025
Hyeongsoon Kwon, Sehwan Song, Hyeonyu Kim, Minchan Kim, Seyoung Kwon, Jisung Lee, Okkyun Seo, Jiayi Tang, Chang-woo Cho, Younghak Kim, Tae-Yeol Jeon, Jonghan Won, Jouhahn Lee, Jong-Seong Bae, Sungkyun Park and Dooyong Lee
Kyungpook National University, Pusan National University, Kyungpook National University, Kyungpook National University, Pusan National University, Pusan National University, Japan Synchrotron Radiation Research Institute, Japan Synchrotron Radiation Research Institute, Chungnam National University, Pohang University of Science and Technology (POSTECH) - Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH) - Pohang Accelerator Laboratory, Korea Basic Science Institute (KBSI), Korea Basic Science Institute (KBSI), Korea Basic Science Institute (KBSI), Pusan National University, Department of Physics and Kyungpook National University
Downloads 78 (823,616)

Abstract:

Loading...

VO2, Insulator-Metal Transition, Hydrogen Incorporation, V-V dimer

2.

Enhancement of Device Performance in Vertical Au/Ni/Β-Ga2o3 Schottky Barrier Diodes Using Regularly Aligned Inner Field Plates

Number of pages: 15 Posted: 21 May 2024
Chel-Jong Choi, Hoon-Ki Lee, V. Janardhanam, Jae Kyoung Mun, Tae-Hoon Jang, Hyung Joong Yun, Jonghan Won and Kyu-Hwan Shim
Jeonbuk National University, Electronics and Telecommunications Research Institute, Jeonbuk National University, Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, Korea Basic Science Institute (KBSI), Korea Basic Science Institute (KBSI) and Jeonbuk National University
Downloads 38 (1,236,159)

Abstract:

Loading...

oxide materials, thin films, semiconductors, electrical transport, electronic properties, computer simulations

3.

Annealing-temperature-dependent defect evolution and carrier transport in Si-implanted single-crystal AlN

Number of pages: 23 Posted: 23 May 2026
Sameer Pokhrel, Sung-Won Lee, Hyung Joong Yun, Jonghan Won and Chel-Jong Choi
Jeonbuk National University, Jeonbuk National University, Korea Basic Science Institute (KBSI), Korea Basic Science Institute (KBSI) and Jeonbuk National University - Semiconductor Physics Research Center
Downloads 20 (1,459,862)

Abstract:

Loading...

AlN, Si implantation, nitrogen defect, out-diffusion, Schottky contact, carrier transport