Ge photodetector, Ge on sinsulator, condensation, ebeam-nanopatterning, strain relaxation, dynamic morphological evolution
MOSFET, advanced 300mm industrial process, Fully Depleted Silicon Germanium-On-Insulator, band-gap engineering, fully strained SiGe
laser-matter interaction, multilayer thin films, crystallization, phase change materials, micro-spectroscopy
Double Porous Silicon, SiGe epilayer, Transmission Electronic Microscopy, High Resolution X-ray diffraction
Porous Silicon, compliant substrate, hetero-epitaxy growth, III-V on Si, MBE, SiGe buffer layer, twins, strain relaxation