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Feng Yang

affiliation not provided to SSRN

  • affiliation not provided to SSRN

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The Effects and Mechanisms of 2 Mev Proton Irradiation on High Bias Conditions of Inp/Ingaas Dhbts

Number of pages: 13 Posted: 14 Feb 2023
Yinghui Zhong, Runkun Liu, Bo Mei, Yongbo Su, Feng Yang, Jialin Zhang, Chen Zhang, Huanqing Yun, Yi Sun, Haiming Zhang and Zhi Jin
Zhengzhou University, Zhengzhou University, China Academy of Space Technology, affiliation not provided to SSRN, affiliation not provided to SSRN, Zhengzhou University, Zhengzhou University, Zhengzhou University, China Academy of Space Technology, China Academy of Space Technology and Chinese Academy of Sciences (CAS)
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InP/InGaAs heterojunction bipolar transistors, proton irradiation, heterojunction barrier effect