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Guoliang Ma

Harbin Institute of Technology

92 West Dazhi Street

Nan Gang District

Harbin, 150001

China

  • Harbin Institute of Technology

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Scholarly Papers (1)

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Effects of Ionizing Radiation on 4h-Sic Mosfets at Cryogenic Temperature

Number of pages: 6 Posted: 14 Feb 2023
Yiping Xiao, Chaoming Liu, Qingkui Yu, Yanqing Zhang, Chunhua Qi, Guoliang Ma, Tianqi Wang and Mingxue Huo
Harbin Institute of Technology, Harbin Institute of Technology, China Academy of Space Technology, Harbin Institute of Technology, Harbin Institute of Technology, Harbin Institute of Technology, Harbin Institute of Technology and Harbin Institute of Technology
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Abstract:

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4H-SiC MOSFET, radiation damage, cryogenic temperatures, TID effects, radiation defects.