92 West Dazhi Street
Nan Gang District
Harbin, 150001
China
Harbin Institute of Technology
4H-SiC MOSFET, radiation damage, cryogenic temperatures, TID effects, radiation defects.
VSe2, P-phenylenediamine, LIBs, active sites, charge transfer
VSe2, solvothermal method, LIBs, anode material
VS2, heterostructure, LIBs, cycling stability, diffusion barrier