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Tokio Takahashi

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

2

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Scholarly Papers (2)

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1.

Modeling and Analysis of Undoped Gan Using a Horizontal Laminar Flow Mocvd Reactor

Number of pages: 16 Posted: 06 Nov 2024
Takahiro Gotow, Tsutomu Sonoda, Tokio Takahashi, Hisashi Yamada, Toshihide Ide, Reiko Azumi, Mitsuaki Shimizu, Yosuke Tsunooka, Shota Seki, Kentaro Kutsukake and Toru Ujihara
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Nagoya University, Nagoya University, Nagoya University and Nagoya University
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GaN, MOCVD, gas-phase reactions, carbon impurity

2.

Fabrication and Characterization of Hemt Using a Sputtering Buffer Layer on a Si Substrate

Number of pages: 16 Posted: 01 Mar 2023
Yoshihiro Ueoka, Yuya Suemoto, Maki Kiuchi, Tokio Takahashi, Mitsuaki Shimizu and Masami Mesuda
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
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A1.Stresses, A3.Physical vapor deposition processes, A3.Superlattices, B1.Nitride, B2.Semiconducting III-V materials, B3.High electron mobility transistors