default author photo

Hisashi Yamada

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

2

DOWNLOADS

202

TOTAL CITATIONS

0

Scholarly Papers (2)

Actions:
Email selected abstracts
1.

Epitaxial Growth of 4h-Sic Layers on 4h-Sic Vicinal Off Angle Substrates for Gan/Sic Hybrid Devices

Number of pages: 41 Posted: 28 Jan 2025
Kazutoshi Kojima, Akira Nakajima, Hisashi Yamada and Shinsuke Harada
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 101

Abstract:

Loading...

4H-SiC, AlGaN/GaN HEMT, Hybrid Device, Heteroepitaxy, Surface Morphology, Step Bunching

2.

Modeling and Analysis of Undoped Gan Using a Horizontal Laminar Flow Mocvd Reactor

Number of pages: 16 Posted: 06 Nov 2024
Takahiro Gotow, Tsutomu Sonoda, Tokio Takahashi, Hisashi Yamada, Toshihide Ide, Reiko Azumi, Mitsuaki Shimizu, Yosuke Tsunooka, Shota Seki, Kentaro Kutsukake and Toru Ujihara
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Nagoya University, Nagoya University, Nagoya University and Nagoya University
Downloads 101

Abstract:

Loading...

GaN, MOCVD, gas-phase reactions, carbon impurity