SiC crystal growth, PVT method, numerical simulation, thermal field optimization, crystal quality, guide tube
MOSFET, strain, piezo effect, dot cell, stripe cell, wafer warpage
Health monitoring, IGBT module, Power cycle degradation, Bond wire, Digital gates, condition monitoring
dislocation propagation, minority carrier lifetime, 300-mm Si-IGBTs fabrication, high thermal budget process, temperature distribution, thermal stress
IGBT modules, parallel connection, stray inductance, digital gate driver, switching loss, overshoot, gate voltage spike
