Jisheng Han

Shandong University

27 Shanda Nanlu

South Rd.

Jinan, SD 250100

China

  • Shandong University

SCHOLARLY PAPERS

1

DOWNLOADS

25

TOTAL CITATIONS

0

Scholarly Papers (1)

Actions:
Email selected abstracts
1.

Influence of Post Fabrication Annealing on Device Performance of Inaln/Gan High Electron Mobility Transistors

Number of pages: 13 Posted: 15 Nov 2023
xin luo, Peng Cui, Handoko Linewih, Kuan Yew Cheong, Mingsheng Xu, Siheng Chen, Liu Wang, Jiuji Sun, Jiacheng Dai, Xiangang Xu and Jisheng Han
Shandong University, Shandong University, Shandong University, Universiti Sains Malaysia (USM), Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 25 (1,108,071)

Abstract:

Loading...

InAlN/GaN HEMT, post fabrication annealing, Schottky barrier, electron mobility, scattering