27 Shanda Nanlu
South Rd.
Jinan, SD 250100
China
Shandong University
gallium nitride, ICP etching, subsurface damage, material removal, chemical mechanical polishing
InAlN/GaN HEMT, post fabrication annealing, Schottky barrier, electron mobility, scattering
GaN, homo-epitaxial, surface morphology, dislocation, strain