27 Shanda Nanlu
South Rd.
Jinan, SD 250100
China
Shandong University
GaN, HVPE, Three-Dimensional mesh porous structure, freestanding, dislocation
gallium nitride, ICP etching, subsurface damage, material removal, chemical mechanical polishing
AlN crystal growth, PVT method, gas transport, crucible module, finite element analysis, polycrystalline nu-cleation
PVT, AlN single-crystal, temperature distribution, thermal stresses, adhesive layer
PVT, AlN, crystal growth, high-quality, double seeds
GaN, homo-epitaxial, surface morphology, dislocation, strain
porous, non-polar GaN crystal, defects passivation, stress regulation, gallium oxynitride nanolayer, heat annealing
porous, non-polar GaN crystal, defects passivation, stress regulation, gallium oxynitride nanolayer, heat annealing.