27 Shanda Nanlu
South Rd.
Jinan, SD 250100
China
Shandong University
GaN, Thermal conductivity, First-principles, Phonon
GaN, Crystal, Thermal conductivity, First-principles
Gallium nitride (GaN), Chemical mechanical polishing (CMP), Ductile-mode grinding, subsurface damage, Phase transformation, Material removal rate
gallium nitride, ICP etching, subsurface damage, material removal, chemical mechanical polishing
PVT, AlN single-crystal, temperature distribution, thermal stresses, adhesive layer
PVT, AlN, crystal growth, high-quality, double seeds
AlN, ICP etching, CMP, large-scale, high-precision
GaN, HVPE, buffer, Si-doped
GaN, HVPE, n-type, Si doping
Porous substrate, HVPE method, GaN