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Shouzhi Wang

Shandong University

27 Shanda Nanlu

South Rd.

Jinan, SD 250100

China

SCHOLARLY PAPERS

10

DOWNLOADS

366

TOTAL CITATIONS

0

Scholarly Papers (10)

Experimental and First-Principles study of Thermal Conductivity in GaN

Number of pages: 26 Posted: 25 Oct 2025
Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 38 (1,281,607)

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GaN, Thermal conductivity, First-principles, Phonon

Experimental and First-Principles study of Thermal Conductivity in GaN

Number of pages: 25 Posted: 12 Jan 2026
Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 15 (1,570,077)

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GaN, Crystal, Thermal conductivity, First-principles

Experimental and First-Principles study of Thermal Conductivity in GaN

Number of pages: 25 Posted: 12 Jan 2026
Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 12 (1,589,301)

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GaN, Crystal, Thermal conductivity, First-principles

2.

Activating Chemical Inertness in GaN for High-Speed Polishing: A Subsurface Microstructure-Driven Paradigm

Number of pages: 20 Posted: 29 Oct 2025
Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 55 (1,031,043)

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Gallium nitride (GaN), Chemical mechanical polishing (CMP), Ductile-mode grinding, subsurface damage, Phase transformation, Material removal rate

3.

ICP Enhanced Cmp for Efficient and Non-Damaging Gan Polishing

Number of pages: 20 Posted: 10 Jul 2024
Shandong University, Shandong University, Shandong University, Shandong University, Qilu University of Technology, Shandong University, affiliation not provided to SSRN, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 42 (1,157,785)

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gallium nitride, ICP etching, subsurface damage, material removal, chemical mechanical polishing

4.

Suitable Thickness of the Adhesive Layer Facilitates the Release of Thermal Stresses in Aln Crystals

Number of pages: 21 Posted: 26 Jul 2024
Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 37 (1,222,651)

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PVT, AlN single-crystal, temperature distribution, thermal stresses, adhesive layer

5.

Finite Element Simulations Facilitate Double-Seeds Technology to Grow High-Quality Aln Crystal

Number of pages: 22 Posted: 09 Nov 2024
Shandong University, Shandong University, Shandong University, Qilu University of Technology, affiliation not provided to SSRN, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 34 (1,263,436)

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PVT, AlN, crystal growth, high-quality, double seeds

6.

Efficient Preparation of Large-Size Aln Single Crystal Substrates:Icp-Cmp Collaborative Process Optimization

Number of pages: 19 Posted: 10 Jul 2025
Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 33 (1,277,121)

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AlN, ICP etching, CMP, large-scale, high-precision

7.

Effect of Buffer Layers on GaN Growth on Porous Substrates

Number of pages: 15 Posted: 27 Nov 2025
Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 32 (1,304,549)

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GaN, HVPE, buffer, Si-doped

8.

Effects of Si Doping on the Optical Properties of N-Type Gan Crystals

Number of pages: 11 Posted: 16 Aug 2025
Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 32 (1,332,057)

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GaN, HVPE, n-type, Si doping

9.

Effects of Si Doping on the Optical Properties of n-type GaN Crystals

Number of pages: 11 Posted: 29 Sep 2025
Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 31 (1,318,317)

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GaN, HVPE, n-type, Si doping

10.

Research on Growth of GaN on Porous Metal Structure

Number of pages: 10 Posted: 23 Jun 2026
Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University, Shandong University and Shandong University
Downloads 5

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Porous substrate, HVPE method, GaN