27 Shanda Nanlu
South Rd.
Jinan, SD 250100
China
Shandong University
GaN, HVPE, Three-Dimensional mesh porous structure, freestanding, dislocation
Gallium Nitride, HVPE, flow field, simulation, uniformity, gravity
gallium nitride, ICP etching, subsurface damage, material removal, chemical mechanical polishing
GaN, HVPE, n-type, Si doping
GaN, homo-epitaxial, surface morphology, dislocation, strain