27 Shanda Nanlu
South Rd.
Jinan, SD 250100
China
Shandong University
GaN, HVPE, Three-Dimensional mesh porous structure, freestanding, dislocation
GaN, Thermal conductivity, First-principles, Phonon
GaN, Crystal, Thermal conductivity, First-principles
gallium nitride, ICP etching, subsurface damage, material removal, chemical mechanical polishing
AlN, ICP etching, CMP, large-scale, high-precision
GaN, HVPE, buffer, Si-doped
GaN, HVPE, n-type, Si doping
GaN, homo-epitaxial, surface morphology, dislocation, strain
Porous substrate, HVPE method, GaN