affiliation not provided to SSRN
gallium nitride, ICP etching, subsurface damage, material removal, chemical mechanical polishing
porous, non-polar GaN crystal, defects passivation, stress regulation, gallium oxynitride nanolayer, heat annealing
porous, non-polar GaN crystal, defects passivation, stress regulation, gallium oxynitride nanolayer, heat annealing.