27 Shanda Nanlu
South Rd.
Jinan, SD 250100
China
Shandong University
GaN, HVPE, Three-Dimensional mesh porous structure, freestanding, dislocation
GaN, Thermal conductivity, First-principles, Phonon
GaN, Crystal, Thermal conductivity, First-principles
Gallium Nitride, HVPE, flow field, simulation, uniformity, gravity
Gallium nitride (GaN), Chemical mechanical polishing (CMP), Ductile-mode grinding, subsurface damage, Phase transformation, Material removal rate
gallium nitride, ICP etching, subsurface damage, material removal, chemical mechanical polishing
AlN crystal growth, PVT method, gas transport, crucible module, finite element analysis, polycrystalline nu-cleation
PVT, AlN single-crystal, temperature distribution, thermal stresses, adhesive layer
PVT, AlN, crystal growth, high-quality, double seeds
AlN, ICP etching, CMP, large-scale, high-precision
GaN, HVPE, buffer, Si-doped
GaN, HVPE, n-type, Si doping
GaN, homo-epitaxial, surface morphology, dislocation, strain
porous, non-polar GaN crystal, defects passivation, stress regulation, gallium oxynitride nanolayer, heat annealing
Gallium nitride, Fenton reaction, Chemical Mechanical Polishing, Hydroxylamine, Material removal
porous, non-polar GaN crystal, defects passivation, stress regulation, gallium oxynitride nanolayer, heat annealing.
Porous substrate, HVPE method, GaN
