27 Shanda Nanlu
South Rd.
Jinan, SD 250100
China
Shandong University
GaN, HVPE, Three-Dimensional mesh porous structure, freestanding, dislocation
GaN, Thermal conductivity, First-principles, Phonon
GaN, Crystal, Thermal conductivity, First-principles
Gallium nitride (GaN), Chemical mechanical polishing (CMP), Ductile-mode grinding, subsurface damage, Phase transformation, Material removal rate
GaN, HVPE, buffer, Si-doped
GaN, HVPE, n-type, Si doping
Porous substrate, HVPE method, GaN