27 Shanda Nanlu
South Rd.
Jinan, SD 250100
China
Shandong University
Gallium nitride (GaN), Chemical mechanical polishing (CMP), Ductile-mode grinding, subsurface damage, Phase transformation, Material removal rate
4H-SiC, Chemical mechanical polishing (CMP), Strong oxidants, Multi-scale defects, Surface integrity, Scatter normal (ScN) imaging
Gallium nitride, Fenton reaction, Chemical Mechanical Polishing, Hydroxylamine, Material removal