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N. Rahbany

American University of Beirut

Beirut, 0236

Lebanon

  • American University of Beirut

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Temperature Dependence of the Anisotropy of the Infrared Dielectric Properties and Phonon-Plasmon Coupling in N-Doped 4h-Sic

Number of pages: 32 Posted: 15 Nov 2023
Michel Kazan, C. Zgheib, A. Bruyant, K. -T. Wu, Y. El-Helou, N. Rahbany and J. Chahal
American University of Beirut, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, American University of Beirut, American University of Beirut and American University of Beirut
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Abstract:

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silicon carbide, temperature dependence of physical properties, anisotropy of physical properties, phonon-plasmon coupling