Tauyuan
Taiwan
Chang Gung University
Hf0.5Zr0.5O2 (HZO), atomic layer deposited (ALD), TiN bottom electrode, TiOxNy interfacial layer
epinephrine, extended-gate field-effect transistor (EGFET), polyimide, flexible biosensor, InZnSnO sensitive film
BiFeO3, La2O3, Pr2O3, Sm2O3, Tm2O3, buffer layers, sol-gel method.
Ta-doped MoSex, polyimide (PI), extended-gate field-effect transistor (EGFET), flexible, epinephrine detection
WOx-W/TiN/Ti sensitive film, pH sensor, extended-gate field-effect transistor (EGFET), rapid thermal annealing (RTA)
BiFeO3, Nd2O3, Eu2O3, Ho2O3, Er2O3, sol-gel method
NbVSeOx sensing film, EGFET, cTnI, BNP, NT-proBNP