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D. L. Goroshko

Institute of Automation and Control Processes FEB RAS

SCHOLARLY PAPERS

5

DOWNLOADS

117

TOTAL CITATIONS

0

Scholarly Papers (5)

Thermoelectric Materials Based on Cobalt-Containing Sintered Silicon-Germanium Alloys

Number of pages: 25 Posted: 24 Aug 2024
Belarusian State University of Informatics and Radioelectronics, Belarusian State University of Informatics and Radioelectronics, Belarusian State University of Informatics and Radioelectronics, National Research University of Electronic Technology, National Research University of Electronic Technology, National Research University of Electronic Technology, Institute of Automation and Control Processes FEB RAS, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 33 (1,311,254)

Abstract:

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electrochemical deposition, semiconductors, silicon-germanium, cobalt silicides, thermoelectric materials

Thermoelectric Materials Based on Cobalt-Containing Sintered Silicon-Germanium Alloys

Number of pages: 25 Posted: 08 Aug 2024
Belarusian State University of Informatics and Radioelectronics, Belarusian State University of Informatics and Radioelectronics, Belarusian State University of Informatics and Radioelectronics, National Research University of Electronic Technology, National Research University of Electronic Technology, National Research University of Electronic Technology, Institute of Automation and Control Processes FEB RAS, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 14 (1,570,077)

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electrochemical deposition, semiconductors, silicon-germanium, cobalt, cobalt silicides, thermoelectric materials

2.

Electrochemically Deposited Germanium Nanowires: Structure and Resistivity Against High-Temperature Oxidation

Number of pages: 32 Posted: 28 Nov 2023
Institute of Automation and Control Processes FEB RAS, National Research University of Electronic Technology, affiliation not provided to SSRN, National Research University of Electronic Technology, National Research University of Electronic Technology, affiliation not provided to SSRN, National Research University of Electronic Technology and National Research University of Electronic Technology
Downloads 31 (1,318,317)

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Electrochemical deposition, germanium nanowires, germanium oxide, passivation, photoluminescence, Raman spectroscopy, transmission electron microscopy

3.

Impact of Porous Silicon Thickness on Thermoelectric Properties of Silicon-Germanium Alloy Films Produced by Electrochemical Deposition of Germanium into Porous Silicon Matrices Followed by Rapid Thermal Annealing

Number of pages: 13 Posted: 26 Sep 2024
Belarusian State University of Informatics and Radioelectronics, Belarusian State University of Informatics and Radioelectronics, National Research University of Electronic Technology, Institute of Automation and Control Processes FEB RAS, affiliation not provided to SSRN, Lomonosov Moscow State University, Belarusian State University of Informatics and Radioelectronics, National Research University of Electronic Technology, National Research University of Electronic Technology and National Research University of Electronic Technology
Downloads 21 (1,436,435)

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porous silicon, electrochemical deposition, silicon-germanium, Thermoelectric materials, Thin films

4.

CrSi and CrSi2 films grown by MBE on Si(111) and Si(001) substrates at different Cr to Si flow’s ratio: crystal and phonon structure and thermoelectric properties

Number of pages: 80 Posted: 10 Jun 2026
Institute of Automation and Control Processes FEB RAS, Institute of Automation and Control Processes FEB RAS, Institute of Automation and Control Processes FEB RAS, affiliation not provided to SSRN, Institute of Automation and Control Processes FEB RAS, Institute of Automation and Control Processes FEB RAS, affiliation not provided to SSRN, Vladivostok's 100th Anniversary Avenue, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences and affiliation not provided to SSRN
Downloads 13

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CrSi and CrSi2 filmscrystal structureRaman peakstwo-layer thermoelectromotive force model Seebeck coefficient and power factorpromising thermoelectric material

5.

Thin Cr3Si Films Grown on Al2O3(001) by MBE: Crystalline Structure, Electronic, Phonon and Optical Properties

Number of pages: 58 Posted: 10 Jun 2026
Institute of Automation and Control Processes FEB RAS, Institute of Automation and Control Processes FEB RAS, Institute of Automation and Control Processes FEB RAS, Institute of Automation and Control Processes FEB RAS, Institute of Automation and Control Processes FEB RAS, Institute of Automation and Control Processes FEB RAS, Institute of Automation and Control Processes FEB RAS, Belarusian State University of Informatics and Radioelectronics, Belarusian State University of Informatics and Radioelectronics, Luleå University of Technology, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Institute of Nanotechnology of Microelectronics RAS, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Vladivostok's 100th Anniversary Avenue and Belarusian State University of Informatics and Radioelectronics
Downloads 5

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Cr3Siband structure new ground statethin filmscrystal structureRaman phonons